Electronic structure of the substitutional versus interstitial manganese in GaN

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the two-fold and the three-fold degenerate Mn(d)states in the gap are reversed between the two cases, which is understood in terms of the symmetry-controlled hybridization with the neighboring atoms. In contrast to Mn_Ga, which acts as a deep acceptor, Mn_I acts as a donor, suggesting the formation of Coulomb-stabilized complexes such as (Mn_Ga Mn_I Mn_Ga), where the acceptor level of Mn_Ga is passivated by the Mn_I donor. Formation of such passivated clusters might be the reason for the observed low carrier-doping efficiency of Mn in GaN. Even though the Mn states are located well inside the gap,the wave functions are spread far away from the impurity center. This is caused by the hybridization with the nitrogen atoms, which acquire small magnetic moments aligned with the Mn moment. Implications of the differences in the electronic structure for the optical properties are discussed

Analytic models of ducted turbomachinery tone noise sources. Volume 2: Subprogram documentation

Analytical models were developed for computing the periodic sound pressures of subsonic fans in an infinite hardwall annular duct with uniform flow. The computer programs are described which are used for numerical computations of sound pressure mode amplitudes. The data are applied to the acoustic properties of turbomachinery

Analytic models of ducted turbomachinery tone noise sources. Volume 1: Analysis

The analytic models developed for computing the periodic sound pressure of subsonic fans and compressors in an infinite, hardwall annular duct with uniform flow are described. The basic sound-generating mechanism is the scattering into sound waves of velocity disturbances appearing to the rotor or stator blades as a series of harmonic gusts. The models include component interactions and rotor alone

Analytic models of ducted turbomachinery tone noise sources. Volume 3: Program test case results

Computer programs for analyzing the acoustic properties of turbomachinery with ducted flow were developed. The models include component interactions and rotor alone. Test case results determined from the computer programs are presented

Multiband effects on beta-FeSe single crystals

We present the upper critical fields Hc2(T) and Hall effect in beta-FeSe single crystals. The Hc2(T) increases as the temperature is lowered for field applied parallel and perpendicular to (101), the natural growth facet of the crystal. The Hc2(T) for both field directions and the anisotropy at low temperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate Hc2(T) and electronic transport in the normal state

Tunneling limit of heavy-fermion point contacts

We present results for a multichannel tunneling model that describes point-contact spectra between a metallic tip and a superconducting heavy-fermion system. We calculate tunneling spectra both in the normal and superconducting state. In point-contact and scanning tunneling spectroscopy many heavy-fermion materials, like CeCoIn5, exhibit an asymmetric differential conductance, dI/dV, combined with a strongly suppressed Andreev reflection signal in the superconducting state. For Andreev reflection to occur a junction has to be in the highly transparent limit. Here we focus on the opposite limit, namely that of low transparency leading to BCS-like dI/dV curves. We discuss the consequences of a multichannel tunneling model for CeCoIn5 assuming itinerant electron bands and localized f electrons.Comment: Contribution at SCES-201

Raman imaging and electronic properties of graphene

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 $\mu$m at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate

Quantum transport of two-dimensional Dirac fermions in SrMnBi2

We report two-dimensional quantum transport in SrMnBi$_2$ single crystals. The linear energy dispersion leads to the unusual nonsaturated linear magnetoresistance since all Dirac fermions occupy the lowest Landau level in the quantum limit. The transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field linear-field dependence. With increase in the temperature, the critical field $B^*$ increases and the temperature dependence of $B^*$ satisfies quadratic behavior which is attributed to the Landau level splitting of the linear energy dispersion. The effective magnetoresistant mobility $\mu_{MR}\sim 3400$ cm$^2$/Vs is derived. Angular dependent magnetoresistance and quantum oscillations suggest dominant two-dimensional (2D) Fermi surfaces. Our results illustrate the dominant 2D Dirac fermion states in SrMnBi$_2$ and imply that bulk crystals with Bi square nets can be used to study low dimensional electronic transport commonly found in 2D materials like graphene.Comment: 5 papges, 4 figure